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Hebei Rich Cause Technology Co.ltd
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semiconductor laser cladding system
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1
semiconductor laser cladding system
Specification: RH3800
Detail: Equipment parameters: Main Machine Power: 3800W Wavelength: 976 Focal Length: 153mm Facula Size: 2mm*8mm Laser Device Size: 350mm*180mm*190mm Photoelectric Conversion: 55% Density Ratios with Carbon Diox...
2
semiconductor laser cladding system
Specification: RH3000
Detail: Equipment parameters: Main Machine Power: 3000W Wavelength: 976 Focal Length: 153mm Facula Size: 2mm*8mm Laser Device Size: 350mm*180mm*190mm Photoelectric Conversion: 55% Density Ratios with Carbon Dioxide Laser Power:...
Showing 1 - 2 of 2, total 1 pages [First] [Previous] [Next] [Last]
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