Hebei Rich Cause Technology Co.ltd

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semiconductor laser cladding system
Specification: RH3800
Detail: Equipment parameters: Main Machine Power: 3800W Wavelength: 976 Focal Length: 153mm Facula Size: 2mm*8mm Laser Device Size: 350mm*180mm*190mm Photoelectric Conversion: 55% Density Ratios with Carbon Diox...

semiconductor laser cladding system
Specification: RH3000
Detail: Equipment parameters: Main Machine Power: 3000W Wavelength: 976 Focal Length: 153mm Facula Size: 2mm*8mm Laser Device Size: 350mm*180mm*190mm Photoelectric Conversion: 55% Density Ratios with Carbon Dioxide Laser Power:...

semiconductor laser cladding system
Specification: RH2000
Detail: Equipment parameters: Main Machine Power: 2000W Wavelength: 976 Focal Length: 153mm Facula Size: 1.5mm*4mm Laser Device Size: 250mm*120mm*130mm Photoelectric Conversion: 55% Density Ratios with Carbon Diox...

rh900 laser cladding system
Specification: RH900
Detail: RH-900 Laser Cladding System Major Function: 1、Three-DimensionalNumerical Control Operating System X axis journey 1000mm, Y axis journey 1500mm, Z axis journey 500mm All kinds of plane, surface of curve,...

rh-800laser cladding system
Specification: 600*800
Detail: Major Functions of RH-800 Laser Cladding System 1.Scope of Application Rapid repairing of defects on large, medium and small size various machinery parts; Repairing of defects on matrices of various materials and hardnes...

rh-700 laser cladding system
Specification: 600*800
Detail: Major Functions of RH-700 Laser Cladding System 1. Scope of Application Rapid repairing of defects on large, medium and small size various machinery parts; Repairing of defects on matrices of various materials and hardness;...


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